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  *rohs directive 2002/95/ec jan 27 2003 including annex specifications are subject to change without notice. customers should verify actual device performance in their specific applications. cdnbs08-t03~t36c C tvs diode array series features lead free as standard rohs compliant* protects 4 lines unidirectional & bidirectional configurations esd protection > 40 kv applications audio/video inputs rs-232, rs-422 & rs-423 data lines portable electronics medical sensors general information electrical characteristics (@ t a = 25 ? unless otherwise noted) thermal characteristics (@ t a = 25 ? unless otherwise noted) the markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. bourns offers transient voltage suppressor array diodes for surge and esd protection applications, in 8 lead narrow body soic package size format. the transient voltage suppressor array series offer a choice of voltage types ranging from 3 v to 36 v in unidirectional and bidirectional configurations. bourns chip diodes conform to jedec standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. the bourns device will meet iec 61000-4-2 (esd), iec 61000-4-4 (eft) and iec 61000-4-5 (surge) requirements. parameter symbol max. unit operating temperature t j -55 to +150 ? storage temperature t stg -55 to +150 ? notes: 1. see pulse wave form. 2. see peak pulse power vs. pulse time. 3. only applies to unidirectional devices. 4. part numbers with a ??suffix are bidirectional devices, i.e. cdnbs08-t03c. 8765 1234 8765 1234 parameter symbol cdnbs08- unit uni- bi- uni- bi- uni- bi- uni- bi- uni- bi- uni- bi- uni- bi- t03 t03c t05 t05c t08 t08c t12 t12c t15 t15c t24 t24c t36 t36c breakdown voltage @ 1 ma v br 3.3 6.0 8.5 13.3 16.7 26.7 40.0 v working peak voltage v wm 3.0 5.0 8.0 12.0 15.0 24.0 36.0 v maximum clamping voltage v c @ i p 1 v f 4.0 9.8 13.4 19.0 24.0 43.0 51.0 v maximum clamping voltage @ 8/20 ? v c @ i pp 1 v f 10.9 v @ 43 a 13.5 v @ 42 a 16.9 v @ 34 a 25.9 v @ 27 a 30.0 v @ 17 a 49.0 v @ 12 a 76.8 v @ 9 a v maximum leakage current @ v wm i d 125 20 10 1 1 1 1 ? maximum cap unidirectional @ 0 v, 1 mhz c j(sd) 800 550 500 185 140 88 80 pf maximum cap bidirectional @ 0 v, 1 mhz c j(sd) 450 308 300 105 80 50 45 pf peak pulse power (tp = 8/20 ?) 2 p pp 500 w forward voltage @ 100 ma, 300 ? ?square wave 3 v f 1.5 v *rohs compliant
*rohs directive 2002/95/ec jan 27 2003 including annex specifications are subject to change without notice. customers should verify actual device performance in their specific applications. cdnbs08-t03~t36c C tvs diode array series a b c d e f g h millimeters (inches) dimensions = ab c d e dimensions a 4.80 - 5.00 (0.189 - 0.196) b 3.80 - 4.00 (0.150 - 0.157) c 5.80 - 6.20 (0.229 - 0.244) d 1.35 - 1.75 (0.054 - 0.068) e 0.10 - 0.25 (0.004 - 0.008) f 0.25 - 0.50 (0.010 - 0.019) g 0.40 - 1.250 (0.016 - 0.049) h 0.18 - 0.25 (0.007 - 0.009) dimensions a 1.143 - 1.397 (0.045 - 0.055) b 0.635 - 0.889 (0.025 - 0.035) c 6.223 (0.245) min. d 3.937 - 4.191 (0.155 - 0.165) e 1.016 - 1.27 (0.040 - 0.050) this is a molded jedec narrow body so-8 package with lead free 100 % sn plating on the lead frame. it weighs approximately 15 mg and has a flammability rating of ul 94v-0. recommended footprint how to order cd nbs08 - t 03 c common code chip diode package ?nbs08 = narrow body soic8 package model t = transient voltage supressor working peak voltage 3 = 3 v rwm (volts) suffix c = bidirectional diode product dimensions
*rohs directive 2002/95/ec jan 27 2003 including annex specifications are subject to change without notice. customers should verify actual device performance in their specific applications. cdnbs08-t03~t36c C tvs diode array series performance graphs peak pulse power vs pulse time 10,000 1,000 100 10 1 0.01 10 100 10,000 1,000 p pp C peak pulse power (kw) t d C pulse duration (s) 500 w, 8/20 s waveform pulse wave form 20 40 60 80 100 120 0 030 25 20 15 10 5 i pp C peak pulse current (% of i pp ) t C time (s) test waveform parameters t t = 8 s t d = 20 s t t e t t d = t | i pp /2 power derating curve 0 20 40 60 80 100 0 25 50 75 100 125 150 % of rated power t l C lead temperature (c) average power peak pulse power 8/20 s block diagram device pinout pin function 1 i/o 1 2 i/o 2 3 i/o 3 4 i/o 4 5 gnd 6 gnd 7 gnd 8 gnd 8765 1234 8765 1234 unidirectional bidirectional
*rohs directive 2002/95/ec jan 27 2003 including annex specifications are subject to change without notice. customers should verify actual device performance in their specific applications. cdnbs08-t03~t36c C tvs diode array series packaging the surface mount product is packaged in a 12 mm x 8 mm tape and reel format per eia-481 standard. 2.0 0.05 (.08 .002) 0.3 0.05 (.01 .002) 9.0 0.1 (.354 .004) 6.4 0.1 (.252 .004) 1.75 0.1 (.07 .004) 5.5 0.3 (.22 .01) 12.0 0.3 (.47 .01) 2.1 0.1 (.083 .004) orientation of component in pocket backside facing up top side view (into component pocket) 0.3 (0.01) 4.0 0.1 (.16 .004) 8.0 0.3 (.31 .01) 0.25 (0.010) typ. r 1.5 0.1/-0 (.06 .004/-0) dia. max. r dimensions = millimeters (inches) reliable electronic solutions asia-pacific: tel: +886-2 2562-4117 ?fax: +886-2 2562-4116 europe: tel: +41-41 768 5555 ?fax: +41-41 768 5510 the americas: tel: +1-951 781-5500 ?fax: +1-951 781-5700 www.bourns.com copyright? 2005, bourns, inc. litho in u.s.a., ipa0501 04/05


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